PART |
Description |
Maker |
V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
V54C3128164VS V54C3128164VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic, Corp
|
K4N26323AE-GC25 K4N26323AE-GC20 K4N26323AE-GC22 K4 |
128Mbit GDDR2 SDRAM 128Mbit GDDR2 SDRAM 4M X 32 DDR DRAM, PBGA144
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S281632M-TL80 K4S281632M K4S281632M-L10 K4S28163 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC Mosel Vitelic, Corp. Mosel Vitelic Corp
|
K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N2632 |
128Mbit GDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D2816 |
128Mbit DDR SDRAM 128Mbit DDR SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM48S16030BT-G_FA KM48S16030BT-G_FH KM48S16030BT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W9816G6BB-7 W9816G6BB |
BGA SDRAM 512K X 2 BANKS X 16 BITS SDRAM From old datasheet system
|
Winbond Electronics
|
W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM 1M x 4 BANKS x 16 BITS SDRAM From old datasheet system BGA SDRAM
|
WINBOND[Winbond] Winbond Electronics
|